Search results for "Semiconducting silicon"
showing 3 items of 3 documents
Polymer/metal hybrid multilayers modified Schottky devices
2013
Insulating, polymethylmethacrylate (PMMA), and semiconducting, poly(3-hexylthiophene) (P3HT), nanometer thick polymers/Au nanoparticles based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate. An iterative method, which involves, respectively, spin-coating (PMMA and P3HT deposition) and sputtering (Au nanoparticles deposition) techniques to prepare Au/HyMLs/p-Si Schottky device, was used. The barrier height and the ideality factor of the Au/HyMLs/p-Si Schottky devices were investigated by current-voltage measurements in the thickness range of 1-5 bilayers. It was observed that the barrier height of such hybrid layered systems can be tuned as a function of bilayers …
Operational experience with a large detector system using silicon strip detectors with double sided readout
1992
Abstract A large system of silicon strip detectors with double sided readout has been successfully commissioned over the course of the last year at the e + e − collider LEP. The readout of this 73 728 channel system is performed with custom designed VLSI charge sensitive amplifier chips (CAMEX64A). An overall point resolution of 12 μm on both sides has been acheived for the complete system. The most important difficulties during the run were beam losses into the detector, and a chemical agent deposited onto the electronics; however, the damage from these sources was understood and brought under control. This and other results of the 1991 data-taking run are described with special emphasis o…
Role of the strain in the epitaxial regrowth rate of heavily doped amorphous Si films
2008
Solid phase epitaxial regrowth (SPER) of p -doped preamorphized Si was studied by time resolved reflectivity. Strain and dopant concentration were opportunely varied by implanting neutral (Ge) and isovalent (B, Ga) impurities in order to disentangle the two different effects on SPER. Larger SPER rate variations occurred in strained doped Si with respect to undoped samples. The generalized Fermi level shifting model was implemented to include the role of the strain and to fit the experimental data over a large range of temperature for p - and n -type doping. We introduced a charged defect, whose energy level is independent of the dopant species. © 2008 American Institute of Physics.